2N7000 FET - N-Channel Enhancement Mode FET TO-92 Package (Pack of 5)

2N7000 is N-channel enhancement mode field effect transistors, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Specifications of 2N7000 FET - N-Channel Enhancement Mode FET TO-92 Package  :

1. Drain-Source Breakdown Voltage min : 60V
2. Gate-Source Threshold Voltage min : 2.0V
3. Gate-Source Threshold Voltage max : 4.0V
4. Gate-Source Leakage max : +100nA