BC Series Transistors

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BCY70 PNP Audio General Purpose Transistor:Collector-Emitter Volt (Vceo): -40V.Collector-Base Volt (Vcbo): -50V.Collector Current (Ic): 0.2A.hfe: 100 @ 10mA.Power Dissi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC640 PNP Audio General Purpose Transistor:Collector-Emitter Volt (Vceo): 80V.Collector Current (Ic): 0.5A.hfe: 40 @ 150mA.Power Dissipation (Ptot): 625mW.Current-Gain-..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC639 NPN Audio General Purpose Transistor:Collector-Emitter Volt (Vceo): 80V.Collector Current (Ic): 0.5A.hfe: 40 @ 160mA.Power Dissipation (Ptot): 625mW.Current-Gain-..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC637 NPN High Current Transistor:Collector-Emitter Volt (Vceo): 60V.Collector Current (Ic): 1.0A.hfe: 40 @ 160mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidth..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC636 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.5A.hfe: 40 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC635 NPN High Current Transistor :Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.5A.hfe: 40 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC560 PNP Low Noise Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Bandwidth..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC559 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC558 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC557 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC556 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 65V.Collector Current (Ic): 0.1A.hfe: 120-500 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC550 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC549 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC548 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC547 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC546 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 65V.Collector Current (Ic): 0.1A.hfe: 110-450 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC517 PNP Darlington Transistor:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 40V.Collector Current (Ic): 1.0A.hfe: 30,000 @ 20mA.Power Dissipation (Pt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes .Features of BC372 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 100V.Collector Current (Ic): 1.0A.hfe: 8000 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC368 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 20V.Collector Current (Ic): 1.0A.hfe: 50 @ 5mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidth (..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC338 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..