TIP Series Transistors

The TIP31 is a standard type of NPN bipolar junction transistor used for medium power applications. TIP31 transistors are designated as TIP31A, TIP31B, and TIP31 to indicate increasing collector-base and collector-emitter breakdown voltage ratings. The TIP31 is packaged in a TO-220 case.Features of ..

The TIP127 is a PNP Epitaxial Darlington Transistor. Mainly used for Medium Power Linear Switching Applications and Complements to TIP120/121/122.Features of TIP 127Collector-Emitter Volt (Vceo): 100V.Collector-Base Volt (Vcbo): 100V.Collector Current (Ic): 5.0A.hfe: 1,000 @ 500mA.Power Dissipation ..

The TIP122 is a NPN Epitaxial Darlington Transistor. Mainly used for Medium Power Linear Switching Applications and Complements to TIP125/126/127.Features of TIP 122Collector-Emitter Volt (Vceo): 100V.Collector-Base Volt (Vcbo): 100V.Collector Current (Ic): 5.0A.hfe: 1,000 @ 500mA.Power Dissipation ..

TIP31C is an NPN type Power Transistor. It has a gain value of 50 and a collector current of 3A.Package Includes:6 x TIP31C NPN Transistor...

TIP127 is a PNP type Darlington pair Transistor. It has a high gain value of 1000 and a collector current of 5A.Package Includes:4 x TIP127 Darlington PNP Transistor...

TIP42C is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageS..

TIP41C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..

TIP36C is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..

TIP35C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.Features:-Low saturation voltageSimple d..

TIP32 is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple dr..

TIP3055 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple ..

An indicator light is mainly used on the circuit or mechanical equipment to monitor and alarm the operation status of the equipment. also, LEDs are commonly used for indicator lights (such as power on/off lights) on electronic devices. They also have several other applications, including electronic ..

TIP120 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..

The TIP50 NPN High Voltage Transistor is silicon Multi epitaxial NPN Planar transistors mounted in Jedec TO-220 plastic package. It is intended for use in linear and switching applicationsTIP50 Key Features250 V to 400 V (Min) — VCEO(sus)1 A Rated Collector CurrentPopular TO–220 Plastic PackageType ..

This transistor falls into the category of power transistors. Power transistors can withstand high power dissipation without damage. Due to the limitations of the transistor package type, it is always required that a power transistor be mounted on a suitable heat sink in other to harness the device’..

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