2SA1175 PNP General Purpose Transistor is designed for the driver stage of AF amplifier applications. 2SA1175 is complementary to 2SC2785.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 110-600 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain..
FeaturesDrain-Source Volt (Vds): 400VDrain-Gate Volt (Vdg): 400VGate-Source Volt (Vgs): 20VDrain Current (Id): 10APower Dissipation (Ptot): 125WType: N-Channel..
2SA1123 PNP General Purpose Transistor is designed for low-frequency high breakdown voltage amplification applications. 2SA1123 complementary to 2SC2631.FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 150VCollector Current (Ic): 0.05Ahfe: 130-450 @ 10mAPower Dissipation (Ptot)..
2SA1084 PNP Low Noise Transistor is designed for Low-frequency low noise amplifier applications. 2SA1084 is complementary to 2SC2545.FeaturesCollector-Emitter Volt (Vceo): -90VCollector-Base Volt (Vcbo): -90VCollector Current (Ic): -0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-B..
2SA1082 PNP General Purpose Transistor is designed for Low-frequency amplifier applications. 2SA1082 is complementary to 2SC2396.FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwi..
The 2SA1048 is a PNP general-purpose transistor that is commonly available in packs of five. This transistor is designed to handle moderate power and voltage levels in a variety of applications. It belongs to the A1048 series of transistors and can be used in amplification, switching, and signal pro..
2SA1015 PNP General Purpose Transistor is designed for the driver stage amplifier applications. 2SA1015 is complementary to 2SC1815.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 50VCollector Current (Ic): 0.15Ahfe: 70-400 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandw..
The 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etcFeaturesHigh BVCEOHigh DC current gainLarge continuous collector curre..
2SA992 PNP General Purpose Transistor is best for use as the middle range amplifier in Hi-Fi stereo control amplifiers; power amplifiers. 2SA992 is Complementary to 2SC1845.FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.05Ahfe: 200-800 @ 1mAPower..
The 2SA950 is a PNP general-purpose transistor that is commonly available in packs of five. This transistor is designed for various applications that require amplification, switching, and signal processing.FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 35VCollector Current (Ic..
2SA933 is PNP General Purpose Transistor having linear Hybrid parameter forward current gain (hfe). 2SA933 is complementary to 2SC2412K.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.15Ahfe: 120-560 @ 1mAPower Dissipation (Ptot): 300mWCurrent-Gain-..
2SA872 PNP Low-Frequency Transistor is designed for Low-frequency low noise amplifier applications. 2SA872 is complementary pair with 2SC1775/A.FeaturesCollector-Emitter Volt (Vceo): 90VCollector-Base Volt (Vcbo): 90VCollector Current (Ic): 0.05Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 300mWCurre..
2SA844 PNP General Purpose Transistor is designed for the Low-frequency amplifier Application. 2SA844 is a Complement to Type 2SC1683FeaturesCollector-Emitter Volt (Vceo): 55VCollector-Base Volt (Vcbo): 55VCollector Current (Ic): 0.1Ahfe: 160-800 @ 2mAPower Dissipation (Ptot): 300mWCurrent-Gain..
2SA950 PNP Audio Amplifier Transistor is designed for Low-frequency amplifier and Complementary pair with 2SC1213.FeaturesCollector-Emitter Volt (Vceo): 35VCollector-Base Volt (Vcbo): 35VCollector Current (Ic): 0.5Ahfe: 60-320 @ 10mAPower Dissipation (Ptot): 400mWType: PNP..
2N6427 NPN Darlington Transistor is designed for applications requiring extremely high current gain at collector currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 20,000-200,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..
2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..
2N6052 is Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low-frequency switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 12.0Ahfe: 750-18,000 @ 6.0A..
2N6045 is a TO-220C package complement to type 2N6040/6041/6042 Darlington High DC current gain Low collector saturation voltage use for general-purpose amplifier and low-speed switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 8..