All Categories
Your Cart

IRFBG30 MOSFET - 1000V 3.1A N-Channel Power MOSFET TO-220 Package

IRFBG30 MOSFET - 1000V 3.1A N-Channel Power MOSFET TO-220 Package

IRFBG30 MOSFET - 1000V 3.1A N-Channel Power MOSFET TO-220 Package

Availability: In stock

Brand: Generic

SKU: RM008245

₹ 69.00
Warehouse Code: R00014-S05-P01-Z01

Product Highlights:

  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Drain-Source Breakdown Voltage (Vds) 1000V
  • Continuous Drain Current (Id) 3.1A
  • Drain-Source Resistance (Rds On) 5Ohms
  • Gate-Source Voltage (Vgs) 20V
  • Gate Charge (Qg) 80 nC
  • Operating Temperature Range -55 - 150°C
  • Power Dissipation (Pd) 125W
Description:
IRFBG30 is the new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.

Features:
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC
Detailed Specifications:-
  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Drain-Source Breakdown Voltage (Vds) 1000V
  • Continuous Drain Current (Id) 3.1A
  • Drain-Source Resistance (Rds On) 5Ohms
  • Gate-Source Voltage (Vgs) 20V
  • Gate Charge (Qg) 80 nC
  • Operating Temperature Range -55 - 150°C
  • Power Dissipation (Pd) 125W
*Note: Product may be differ as per shown in image