IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost. Hence, it is widely used in industrial applications for power dissipation levels up to 43W.

IRF510 MOSFET is capable to withstand drain-to-source voltage VDS up to 100V and continuous drain current ID up to 5.6A. It can withstand 20A current in pulse mode and belongs to the package TO-220AB. It is designed for applications that require high-speed switching like a motor driver, switching converter and regulators, etc.

Features

1. Dynamic dv/dt rating
2. Single-pulse avalanche rated
3. High input impedance
4. Linear transfer characteristic
5. High-speed switching speed (in terms of nano-second)
6. Ease of paralleling
7. Operating temperature up to 175˚C
8. Low thermal resistance

Technical Specifications

1. Transistor Polarity: N-channel
2. Drain-to-source voltage VDS: 100V
3. Drain-to-source current ID: 5.6A
4. On-state resistance (drain-to-source resistance) RDS: 0.54Ω
5. Operating temperature range: -55˚C to 175˚C
6. Gate charge Qg: 8.3nC
7. Gate-source voltage VGS: ±20V
8. Maximum power dissipation: 43W
9. Maximum voltage required to conduct: 2V to 4V
10. Package type: TO-220AB

Switching Characteristics

1. Turn-on delay time td(on): 6.9ns
2. Turn-off delay time td(off): 15ns
3. Rise time tr: 16ns
4. Fall time tf: 9.4ns

Applications

The applications of IRF510 are listed below.

1. UPS (Uninterruptable Power Supply)
   
2. Battery charger and management system
3. Motor driver circuit
4. Telecommunication and computer applications
5. Solar UPS
6. Fast switching applications
7. Switching converter and regulators