Generic

2N6028 Programmable Unijunction Transistor (UJT) 40V 300mW TO-92 Package. Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These ..

FeaturesAnode-Cathode Volt (Vak): ±40VGate-Cathode Forward Volt (Vgkf): 40VDC Forward Anode Current (It): 0.15ADC Gate Current (Ig): ±50mAPower Dissipation (Ptot): 300mWType: Unijunction..

FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 150-700 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 160VCollector-Base Volt (Vcbo): 180VCollector Current (Ic): 0.6Ahfe: 80-250 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 140VCollector-Base Volt (Vcbo): 160VCollector Current (Ic): 0.6Ahfe: 60-250 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector-Base Volt (Vcbo): 350VCollector Current (Ic): 1.0Ahfe: 30-120 @ 50mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 15MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 200VCollector-Base Volt (Vcbo): 200VCollector Current (Ic): 1.0Ahfe: 30-150 @ 50mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 15MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 160VCollector Current (Ic): 0.2Ahfe: 60-240 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 130VCollector Current (Ic): 0.6Ahfe: 40-180 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 400MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 75VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.2Ahfe: 30-130 @ 500mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 1.2Ahfe: 40-250 @ 500mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 1.2Ahfe: 7,000-70,000 @ 2mAPower Dissipation (Ptot): 625mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.3Ahfe: 2,000-20,000 @ 2mAPower Dissipation (Ptot): 400mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 100mAhfe: 50-800 @ 2mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 150MHzType: PNP..

2N5210 NPN General-Purpose Amplifier and Switching Transistor TO-92 Package with molded leads and lead layout of EBC.FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.5Ahfe: 100-500 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal):..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.1Ahfe: 450 @ 1mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 35VCollector Current (Ic): 0.05Ahfe: 350 @ 1mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: PNP..

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FeaturesVersatile, High-Accuracy, Fixed Voltage RegulatorsSuitable for Currents up to 1AInternal Thermal Overload ProtectionInternal Short-Circuit Current LimitOutput Voltage Tolerance ±4%..

The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications. The 2N5087 features high gain and low noise -- the max noise figure of the 2N5087 is only 2.0dB, and the max DC current gain is up to 800, which ensures that the 2N5087 is capable of ..