Generic

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.8Ahfe: 30 @ 50mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: PNP..

..

FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 1.0Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

..

FeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 0.6Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.6Ahfe: 150-600 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 500mAhfe: 2-12 @ 1mAPower Dissipation (Ptot): 625mWType: NPN..

The 2N3553 is an NPN (Negative-Positive-Negative) VHF-UHF transistor that is commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N3553 is specifically designed for applications in the very high frequency (VHF) and ultra-high..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pACommon Mode Rejection Ratio: 90 dBSlew Rate: 9 V/µsLow Supply Current: 6mA..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pACommon Mode Rejection Ratio: 90 dBSlew Rate: 9 V/µsLow Supply Current: 6mA..

Features of JST41Z 800B TRIACGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 800VOn-State Current (It): 40.0AGate Current (Igt): 50mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pAInput Bias Current: 400 nAHigh Slew Rate: 30 V/µsCommon Mode Rejection Ratio: 90 dB..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 40.0AGate Current (Igt): 50mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 25.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 25.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.5V Peak Off-State Voltage(Vdrm): 1000V On-State Current (It): 16.0A Gate Current (Igt): 35mA Av. Gate Power Dissipation (Pg): 1W Typical Voltage Change over Time (dV/dT): 250V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 12.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 12.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 8.0AGate Current (Igt): 25mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 200V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.5VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 6.0AGate Current (Igt): 10mATypical Voltage Change over Time (dV/dT): 10V/µs..