Generic

It is mainly used in check weighing.Features:Aluminum-alloy, Colourless anodized, Hermetically sealed with glue to IP65.Supports Pan size upto 250mm X 350mmEasy to mountingHigh AccuracyDimensions - 130x22x30 mm (Thread Hole : 4-M6)Application:Mainly Used for Table Top MachinesBench ScalePrice Comput..

FeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.2Ahfe: 50-150 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: NPN..

FeaturesImproved DC and AC Characteristics over the TL06x FamilyInput Offset Voltage: 3.5 mVInput Offset Current: 1 pAInput Bias Current: 2 pACommon Mode Rejection: 87 dBSupply Current: 0.5 mASupply Voltage: ±2.5V to ±18V..

The 2N3706 is an NPN (Negative-Positive-Negative) general-purpose transistor that is commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N3706 is specifically designed for general-purpose applications.FeaturesCollector-Emitt..

The 2N3705 is an NPN (Negative-Positive-Negative) general-purpose transistor that is commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N3705 is specifically designed for general-purpose applications.FeaturesCollector-Emitt..

The 2N3704 is an NPN (Negative-Positive-Negative) general-purpose transistor that is commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N3704 is specifically designed for general-purpose applications.FeaturesCollector-Emitt..

The 2N3703 is a PNP general-purpose transistor that is commonly available in packs of five. This transistor is designed for a wide range of applications that require amplification, switching, and signal processing.FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 50VCollector Cur..

The 2N3702 is a PNP general-purpose transistor commonly available in packs of five. This transistor is designed for various applications that require amplification, switching, and signal processing. FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5A..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.8Ahfe: 30 @ 50mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: PNP..

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FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 1.0Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

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FeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 0.6Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.6Ahfe: 150-600 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 500mAhfe: 2-12 @ 1mAPower Dissipation (Ptot): 625mWType: NPN..

The 2N3553 is an NPN (Negative-Positive-Negative) VHF-UHF transistor that is commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N3553 is specifically designed for applications in the very high frequency (VHF) and ultra-high..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pACommon Mode Rejection Ratio: 90 dBSlew Rate: 9 V/µsLow Supply Current: 6mA..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pACommon Mode Rejection Ratio: 90 dBSlew Rate: 9 V/µsLow Supply Current: 6mA..

Features of JST41Z 800B TRIACGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 800VOn-State Current (It): 40.0AGate Current (Igt): 50mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pAInput Bias Current: 400 nAHigh Slew Rate: 30 V/µsCommon Mode Rejection Ratio: 90 dB..