Generic

The 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etcFeaturesHigh BVCEOHigh DC current gainLarge continuous collector curre..

2SA992 PNP General Purpose Transistor is best for use as the middle range amplifier in Hi-Fi stereo control amplifiers; power amplifiers. 2SA992 is Complementary to 2SC1845.FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.05Ahfe: 200-800 @ 1mAPower..

Features:Drain-Source Volt (Vds): 200VGate-Source Volt (Vgs): 200VGate-Source Volt (Vgs): 20VDrain Current (Id): 18APower Dissipation (Ptot): 125WType: N-Channel..

2SA970 PNP Audio Amplifier Transistor is designed for Low noise Audio Amplifier applications.FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.1Ahfe: 200-700 @ 2mAPower Dissipation (Ptot): 300mWCurrent-Gain-Bandwidth (ftotal): 100MHzType: PNP..

The 2SA950 is a PNP general-purpose transistor that is commonly available in packs of five. This transistor is designed for various applications that require amplification, switching, and signal processing.FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 35VCollector Current (Ic..

2SA933 is PNP General Purpose Transistor having linear Hybrid parameter forward current gain (hfe). 2SA933 is complementary to 2SC2412K.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.15Ahfe: 120-560 @ 1mAPower Dissipation (Ptot): 300mWCurrent-Gain-..

FeaturesDrain-Source Volt (Vds): 200VGate-Source Volt (Vgs): 200VGate-Source Volt (Vgs): 20VDrain Current (Id): 3.3APower Dissipation (Ptot): 43WType: N-Channel..

2SA872 PNP Low-Frequency Transistor is designed for Low-frequency low noise amplifier applications. 2SA872 is complementary pair with 2SC1775/A.FeaturesCollector-Emitter Volt (Vceo): 90VCollector-Base Volt (Vcbo): 90VCollector Current (Ic): 0.05Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 300mWCurre..

2SA844 PNP General Purpose Transistor is designed for the Low-frequency amplifier Application. 2SA844 is a Complement to Type 2SC1683FeaturesCollector-Emitter Volt (Vceo): 55VCollector-Base Volt (Vcbo): 55VCollector Current (Ic): 0.1Ahfe: 160-800 @ 2mAPower Dissipation (Ptot): 300mWCurrent-Gain..

2SA950 PNP Audio Amplifier Transistor is designed for Low-frequency amplifier and Complementary pair with 2SC1213.FeaturesCollector-Emitter Volt (Vceo): 35VCollector-Base Volt (Vcbo): 35VCollector Current (Ic): 0.5Ahfe: 60-320 @ 10mAPower Dissipation (Ptot): 400mWType: PNP..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesDrain-Source Volt (Vds): 100VGate-Source Volt (Vgs): 100VGate-Source Volt (Vgs): 20VDrain Current (Id): 30APow..

2N6517 NPN High-Voltage TransistorFeaturesCollector-Emitter Volt (Vceo): 350VCollector-Base Volt (Vcbo): 350VCollector Current (Ic): 0.5Ahfe: 30-200 @ 30mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 40MHzType: NPN..

FeaturesDrain-Source Volt (Vds): 100VGate-Source Volt (Vgs): 100VGate-Source Volt (Vgs): 20VDrain Current (Id): 10APower Dissipation (Ptot): 70WType: N-Channel..

2N6427 NPN Darlington Transistor is designed for applications requiring extremely high current gain at collector currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 20,000-200,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6052 is Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low-frequency switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 12.0Ahfe: 750-18,000 @ 6.0A..

2N6045 is a TO-220C package complement to type 2N6040/6041/6042 Darlington High DC current gain Low collector saturation voltage use for general-purpose amplifier and low-speed switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 8..

2N6043 is Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching Darlington applications.FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 6..

2N6042 is PNP power darlington transistor used in power switching and amplifiers.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 8.0Ahfe: 1,000-20,000 @ 3.0APower Dissipation (Ptot): 75WType: PNP..

IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost. Hence, it is widely used in industrial applications for power dissipation levels up to 43W.IRF510 MOSFET is capable to withstand drain-to-so..