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MJE200 NPN Power Transistor 25V 5A TO-126 Package

MJE200 NPN Power Transistor 25V 5A TO-126 Package

MJE200 NPN Power Transistor 25V 5A TO-126 Package

Availability: In stock

Brand: Generic

SKU: RM005526

₹ 29.00
Warehouse Code: R00021-S02-P02-Z01

Product Highlights:-

  • Transistor Polarity NPN
  • Collector−Emitter Voltage (VCEO) 40VDC
  • Collector−Base Voltage (VCBO) 25VDC
  • Emitter−Base Voltage (VEBO) 8VDC
  • Continuous Collector Current (Ic) 5ADC
  • Continuous Base Current (Ib) 1ADC
  • Power Dissipation (Pd) 15W
  • Operating Temperature Range -65 - 150°C
  • DC Current Gain (hFE) 45-180
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MJE200 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.


Features:-

  • High DC gain
  • The low collector−emitter saturation voltage
  • High current−gain − bandwidth product
  • Annular construction for low leakage
  • These devices are Pb−Free and are RoHS compliant
*Note: Product may be differ as per shown in image