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IRFP2907 MOSFET - 75V 209A N-Channel Power MOSFET TO-247 Package

IRFP2907 MOSFET - 75V 209A N-Channel Power MOSFET TO-247 Package

IRFP2907 MOSFET - 75V 209A N-Channel Power MOSFET TO-247 Package

Availability: In stock

Brand: Generic

SKU: RM002849

₹ 350.00
Warehouse Code: R00000-S00-P00-Z00

Product Highlights:

  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Drain-Source Breakdown Voltage (Vds) 75V
  • Continuous Drain Current (Id) 209A
  • Drain-Source Resistance (Rds On) 4.5mOhms
  • Gate-Source Voltage (Vgs) 20V
  • Gate Charge (Qg) 620 nC
  • Operating Temperature Range -55 - 175°C
  • Power Dissipation (Pd) 470W
Description:
IRFP2907 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features:
  • Advanced process technology
  • Ultra-low on-resistance
  • Dynamic dv/dt rating
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax
Detailed Specifications:
  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Drain-Source Breakdown Voltage (Vds) 75V
  • Continuous Drain Current (Id) 209A
  • Drain-Source Resistance (Rds On) 4.5mOhms
  • Gate-Source Voltage (Vgs) 20V
  • Gate Charge (Qg) 620 nC
  • Operating Temperature Range -55 - 175°C
  • Power Dissipation (Pd) 470W
*Note: Product may be differ as per shown in image