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IRFBE30 MOSFET - 800V 4.1A N-Channel Power MOSFET TO-220 Package

IRFBE30 MOSFET - 800V 4.1A N-Channel Power MOSFET TO-220 Package

IRFBE30 MOSFET - 800V 4.1A N-Channel Power MOSFET TO-220 Package

₹ 102.00
  • Stock: In Stock
  • Brand: Generic
  • SKU: RM006764
Warehouse Code: R00014-S04-P02-Z01

Product Highlights:

  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Drain-Source Breakdown Voltage (Vds) 800V
  • Continuous Drain Current (Id) 4.1A
  • Drain-Source Resistance (Rds On) 3Ohms
  • Gate-Source Voltage (Vgs) 20V
  • Gate Charge (Qg) 78 nC
  • Operating Temperature Range -55 - 150°C
  • Power Dissipation (Pd) 125W
Description:
IRFBE30 is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.

Features:-
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC
Detailed Specifications:-
  • Number of Channels 1 Channel
  • Transistor Polarity N-Channel
  • Drain-Source Breakdown Voltage (Vds) 800V
  • Continuous Drain Current (Id) 4.1A
  • Drain-Source Resistance (Rds On) 3Ohms
  • Gate-Source Voltage (Vgs) 20V
  • Gate Charge (Qg) 78 nC
  • Operating Temperature Range -55 - 150°C
  • Power Dissipation (Pd) 125W
*Note: Product may be differ as per shown in image
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