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Availability: In stock

Brand: Generic

SKU: RM001194

₹ 62.00
Warehouse Code: R00011-S02-P02-Z01
Product Highlights
  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On Resistance Rds(on) of 44mohm at Vgs of 10V
  • Power dissipation Pd of 130W at 25°C

The IRF3205 MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in a wide variety of applications.


  • Gate to source voltage is ±20V
  • On-Resistance Rds(on) of 8mohm at Vgs of 10V
  • Power dissipation (Pd) of 130W at 25°C
  • Continuous drain current (Id) of 110A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C


  • Power Management
  • Industrial
  • Portable Devices
  • Consumer Electronics.
*Note: Product may be differ as per shown in image