The Schottky diode, also we can say that hot carrier diode, is a semiconductor diode which has a low forward voltage drop and a very fast switching action. There is a small voltage drop across the diode terminals when current flows through a diode. A normal diode will have a voltage drop between 0.6 to 1.7 volts, while a Schottky diode voltage drop is usually between 0.15 and 0.45 volts. This lower voltage drop provides better system efficiency and higher switching speed. In a Schottky diode, a semiconductor–metal junction is formed between a semiconductor and a metal, thus creating a Schottky barrier. The N-type semiconductor acts as the cathode and the metal side acts as the anode of the diode. This Schottky barrier results in both a low forward voltage drop and very fast switching.

Features of IN5819 Schottky Diode:

• Peak Inverse voltage: 40v
• RMS reverse voltage: 28v
• Output current: 1 A
• Peak reverse leakage current: 1.0 mA.
• Typical Capacitance: 110pf
• Temperature Range: -65 to 125 degree centigrade.

Applications of IN5819 Schottky Diode:

Schottky diodes are useful in voltage clamping applications and prevention of transistor saturation due to the higher current density in the Schottky diode. they are used in stand-alone photovoltaic systems in order to prevent batteries from discharging through the solar panels at night as well as in grid-connected systems containing multiple strings connected in parallel. Schottky diodes are also used as rectifiers in switched-mode power supplies.

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