Generic

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC183L NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-280 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC182 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 50V.Collector Current (Ic): 0.1A.hfe: 120-500 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC179 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 25V.Collector Current (Ic): 0.1A.hfe: 110-220 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC178 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 25V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.1A.hfe: 110-220 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC177 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector-Base Volt (Vcbo): 50V.Collector Current (Ic): 0.2A.hfe: 125-500 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC161 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 1.0A.hfe: 40-250 @ 100mA.Power Dissipati..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC142 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 80V.Collector Current (Ic): 1.0A.hfe: 100 @ 100mA.Power Dissipation ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC141 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 100V.Collector Current (Ic): 1.0A.hfe: 40-250 @ 100mA.Power Dissipat..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC109 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.2A.hfe: 110-800 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC108 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.2A.hfe: 110-800 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC107 NPN General Purpose Transistor:Nominal Zener Voltage (Vz): 5.1V.Maximum Regulator Current (Izm): 0.070A.Max. Reverse Leakage Current (Ir): 0.001mA.Forward Voltage..

The zener diode is a sharpely breakdown voltage diode which permits it to flow of current in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N751 5.1V 400mW Zener Diodes:Nominal Zener Voltage (Vz): 5.1V.Maximum Regulator Current (Izm): 0.07..

The CD4585B is a 4-bit magnitude comparator designed for use in computer and logic applications that require the comparison of two 4-bit words. This logic circuit determines whether one 4-bit word (Binary or BCD) is "less than", "equal to", or "greater than" a second 4-bit word.Features of CD4585 4-..

The zener diode is a sharpely breakdown voltage diode which permits it to flow of current in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N750 4.7V 400mW Zener Diodes:Nominal Zener Voltage (Vz): 4.7V.Maximum Regulator Current (Izm): 0.07..

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The CD4572UB Hex Gate provides the system designer with direct implementation of inverter, NAND, and NOR functions and supplements the existing family of CMOS gates.Features of CD4572 Hex Gate:Pin 7 NOR input positioned adjacent to VSS for easy use of gate as an inverter.Pin 15 NAND input positioned..

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The zener diode is a sharpely breakdown voltage diode which permits it to flow of current in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N748 3.9V 400mW Zener Diodes:Nominal Zener Voltage (Vz): 3.6VMaximum Regulator Current (Izm): 0.095..

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The CD4553 is a 3 digit BCD counter consists of 3 negative edge triggered BCD counters that are escaped synchronously. A quad latch at the output of each counter permits storage of any given count.Features of CD4553 3-Digit BCD Counter IC:TTL compatible output.On chip oscillator.Cascadable.Clock dis..