Generic

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC238 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.1A.hfe: 200-460 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC237 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC214L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-600 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC213L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 80 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC212L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 50V.Collector Current (Ic): 0.1A.hfe: 60 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC184L NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 250-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC183L NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-280 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC182 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 50V.Collector Current (Ic): 0.1A.hfe: 120-500 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC179 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 25V.Collector Current (Ic): 0.1A.hfe: 110-220 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC178 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 25V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.1A.hfe: 110-220 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC177 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector-Base Volt (Vcbo): 50V.Collector Current (Ic): 0.2A.hfe: 125-500 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC161 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 1.0A.hfe: 40-250 @ 100mA.Power Dissipati..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC142 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 80V.Collector Current (Ic): 1.0A.hfe: 100 @ 100mA.Power Dissipation ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC141 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 100V.Collector Current (Ic): 1.0A.hfe: 40-250 @ 100mA.Power Dissipat..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC109 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.2A.hfe: 110-800 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC108 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.2A.hfe: 110-800 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC107 NPN General Purpose Transistor:Nominal Zener Voltage (Vz): 5.1V.Maximum Regulator Current (Izm): 0.070A.Max. Reverse Leakage Current (Ir): 0.001mA.Forward Voltage..

The zener diode is a sharpely breakdown voltage diode which permits it to flow of current in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N751 5.1V 400mW Zener Diodes:Nominal Zener Voltage (Vz): 5.1V.Maximum Regulator Current (Izm): 0.07..

The CD4585B is a 4-bit magnitude comparator designed for use in computer and logic applications that require the comparison of two 4-bit words. This logic circuit determines whether one 4-bit word (Binary or BCD) is "less than", "equal to", or "greater than" a second 4-bit word.Features of CD4585 4-..

The zener diode is a sharpely breakdown voltage diode which permits it to flow of current in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N750 4.7V 400mW Zener Diodes:Nominal Zener Voltage (Vz): 4.7V.Maximum Regulator Current (Izm): 0.07..