Generic

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC327 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC309 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC307 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC239 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC238 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.1A.hfe: 200-460 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC237 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC214L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-600 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC213L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 80 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC212L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 50V.Collector Current (Ic): 0.1A.hfe: 60 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC184L NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 250-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC183L NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-280 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC182 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 50V.Collector Current (Ic): 0.1A.hfe: 120-500 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC179 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 25V.Collector Current (Ic): 0.1A.hfe: 110-220 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC178 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 25V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.1A.hfe: 110-220 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC177 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector-Base Volt (Vcbo): 50V.Collector Current (Ic): 0.2A.hfe: 125-500 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC161 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 1.0A.hfe: 40-250 @ 100mA.Power Dissipati..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC142 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 80V.Collector Current (Ic): 1.0A.hfe: 100 @ 100mA.Power Dissipation ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC141 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 60V.Collector-Base Volt (Vcbo): 100V.Collector Current (Ic): 1.0A.hfe: 40-250 @ 100mA.Power Dissipat..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC109 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.2A.hfe: 110-800 @ 2mA.Power Dissipatio..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC108 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 20V.Collector-Base Volt (Vcbo): 30V.Collector Current (Ic): 0.2A.hfe: 110-800 @ 2mA.Power Dissipatio..