Generic

The zener diode is a sharply break down voltage diode which allows current to flow in the forward direction in the same manner as an ideal diode, but also permits it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N753 6.2V 400MW..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC547 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC546 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 65V.Collector Current (Ic): 0.1A.hfe: 110-450 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC517 PNP Darlington Transistor:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 40V.Collector Current (Ic): 1.0A.hfe: 30,000 @ 20mA.Power Dissipation (Pt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes .Features of BC372 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 100V.Collector Current (Ic): 1.0A.hfe: 8000 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC368 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 20V.Collector Current (Ic): 1.0A.hfe: 50 @ 5mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidth (..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC338 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC337 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC328 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC327 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC309 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC307 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC239 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC238 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.1A.hfe: 200-460 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC237 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC214L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-600 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC213L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 80 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC212L PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 50V.Collector Current (Ic): 0.1A.hfe: 60 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth ..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC184L NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 250-800 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC183L NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-280 @ 2mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandw..