Generic

FeaturesCollector-Emitter Volt (Vceo): 300VCollector-Base Volt (Vcbo): 300VCollector Current (Ic): 0.1Ahfe: 26 @ 30mAPower Dissipation (Ptot): 6WCurrent-Gain-Bandwidth (ftotal): 90MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector-Base Volt (Vcbo): 250VCollector Current (Ic): 0.1Ahfe: 26 @ 30mAPower Dissipation (Ptot): 6WType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

The zener diode is a sharpely breakdown voltage diode which permits it to flow of current in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N969 22V 400MW Zener Diodes :Nominal Zener Voltage (Vz): 22V.Maximum Regulator Current (Izm): 0.014..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF370 NPN Medium Frequency Transistor :Collector-Emitter Volt (Vceo): 15V.Collector Current (Ic): 0.1A.hfe: 40 @ 1mA.Power Dissipation (Ptot): 500mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF324 PNP Medium Frequency Transistor :Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.025A.hfe: 25 @ 4mA.Power Dissipation (Ptot): 300mW.Current-Gain-Band..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 20VMaximum Regulator Current (Izm): 0.015AMax. Reverse Leakage Current (Ir): 5.0uA..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF259 NPN High Voltage Transistor:Collector-Emitter Volt (Vceo): 300V.Collector-Base Volt (Vcbo): 300V.Collector Current (Ic): 0.1A.hfe: 25 @ 30mA.Power Dissipation (Pt..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 18VMaximum Regulator Current (Izm): 0.017AMax. Reverse Leakage Current (Ir): 5.0uA..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 16VMaximum Regulator Current (Izm): 0.019AMax. Reverse Leakage Current (Ir): 5.0uA..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 15VMaximum Regulator Current (Izm): 0.021AMax. Reverse Leakage Current (Ir): 5.0uA..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF258 NPN High Voltage Transistor:Collector-Emitter Volt (Vceo): 250V.Collector-Base Volt (Vcbo): 250V.Collector Current (Ic): 0.1A.hfe: 25 @ 30mA.Power Dissipation (Pt..

The metal–oxide–semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.Features of BF256 N-Channel RF Transistor:Drain-Gate Voltage (Vdg): 30V.Gate-Source Voltage (Vgs): 30V.Gate-Source Voltage (Vgs-off): 8V.Drain Current (Idss): 18mA.Power ..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 13VMaximum Regulator Current (Izm): 0.024AMax. Reverse Leakage Current (Ir): 5.0uA..

The metal–oxide–semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.Features of BF246 N-Channel Transistor:Drain-Source Voltage (Vds): 40V.Gate-Source Voltage (Vgs-off): 25V.Drain Current (Idss): 140mA.Power Dissipation (Ptot): 625mW.Type..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 12VMaximum Regulator Current (Izm): 0.026AMax. Reverse Leakage Current (Ir): 5.0uA..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF245A N-Channel Transistor:Drain-Source Voltage (Vds): 40V.Gate-Source Voltage (Vgs-off): 8V.Drain Current (Idss): 25mA.Power Dissipation (Ptot): 300mW.Cut-Off Frequen..