Generic

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC635 NPN High Current Transistor :Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.5A.hfe: 40 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC560 PNP Low Noise Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Bandwidth..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC559 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC558 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC557 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The zener diode is a sharply break down voltage diode which allows current to flow in the forward direction in the same manner as an ideal diode, but also permits it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N754 6.8V 400MW..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC556 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 65V.Collector Current (Ic): 0.1A.hfe: 120-500 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC550 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC549 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Ban..

The zener diode is a sharply break down voltage diode which allows current to flow in the forward direction in the same manner as an ideal diode, but also permits it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N752 5.6V 400MW..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC548 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Ban..

The zener diode is a sharply break down voltage diode which allows current to flow in the forward direction in the same manner as an ideal diode, but also permits it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N753 6.2V 400MW..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC547 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC546 NPN General Purpose Transistor:Collector-Emitter Volt (Vceo): 65V.Collector Current (Ic): 0.1A.hfe: 110-450 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC517 PNP Darlington Transistor:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 40V.Collector Current (Ic): 1.0A.hfe: 30,000 @ 20mA.Power Dissipation (Pt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes .Features of BC372 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 100V.Collector Current (Ic): 1.0A.hfe: 8000 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandw..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC368 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 20V.Collector Current (Ic): 1.0A.hfe: 50 @ 5mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidth (..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC338 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC337 NPN Small Signal Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC328 PNP Small Signal Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.8A.hfe: 100-630 @ 100mA.Power Dissipation (Ptot): 625mW.Current-Gain-Band..