Generic

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 13VMaximum Regulator Current (Izm): 0.024AMax. Reverse Leakage Current (Ir): 5.0uA..

The metal–oxide–semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.Features of BF246 N-Channel Transistor:Drain-Source Voltage (Vds): 40V.Gate-Source Voltage (Vgs-off): 25V.Drain Current (Idss): 140mA.Power Dissipation (Ptot): 625mW.Type..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 12VMaximum Regulator Current (Izm): 0.026AMax. Reverse Leakage Current (Ir): 5.0uA..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF245A N-Channel Transistor:Drain-Source Voltage (Vds): 40V.Gate-Source Voltage (Vgs-off): 8V.Drain Current (Idss): 25mA.Power Dissipation (Ptot): 300mW.Cut-Off Frequen..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 11VMaximum Regulator Current (Izm): 0.028AMax. Reverse Leakage Current (Ir): 5.0uA..

Features of BF244A N-Channel RF Amplifier :Drain-Gate Voltage (Vdg) : 30V.Gate-Source Voltage (Vgs) : -30V.Drain Current (Idss) : 50mA.Power Dissipation (Ptot ) : 350mW.Cut-Off Frequency (fgfs) : 700MHz.Type : N-Channel...

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 10VMaximum Regulator Current (Izm): 0.035AMax. Reverse Leakage Current (Ir): 0.1uA..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF240 NPN AM FM Transistor:Collector-Emitter Volt (Vceo): 40V.Collector Current (Ic): 0.025A.hfe: 65-220 @ 1mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth (f..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 9.1VMaximum Regulator Current (Izm): 0.040AMax. Reverse Leakage Current (Ir): 0.1u..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF199 NPN RF Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.1A.hfe: 85 @ 7mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth (ftotal): 7..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BCY70 PNP Audio General Purpose Transistor:Collector-Emitter Volt (Vceo): -40V.Collector-Base Volt (Vcbo): -50V.Collector Current (Ic): 0.2A.hfe: 100 @ 10mA.Power Dissi..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesNominal Zener Voltage (Vz): 8.2VMaximum Regulator Current (Izm): 0.045AMax. Reverse Leakage Current (Ir): 0.1u..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC640 PNP Audio General Purpose Transistor:Collector-Emitter Volt (Vceo): 80V.Collector Current (Ic): 0.5A.hfe: 40 @ 150mA.Power Dissipation (Ptot): 625mW.Current-Gain-..

The zener diode is a sharply break down voltage diode which allows current to flow in the forward direction in the same manner as an ideal diode, but also permits it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N755 7.5V 400MW..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC639 NPN Audio General Purpose Transistor:Collector-Emitter Volt (Vceo): 80V.Collector Current (Ic): 0.5A.hfe: 40 @ 160mA.Power Dissipation (Ptot): 625mW.Current-Gain-..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC637 NPN High Current Transistor:Collector-Emitter Volt (Vceo): 60V.Collector Current (Ic): 1.0A.hfe: 40 @ 160mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidth..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC636 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.5A.hfe: 40 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC635 NPN High Current Transistor :Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.5A.hfe: 40 @ 250mA.Power Dissipation (Ptot): 625mW.Current-Gain-Bandwidt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC560 PNP Low Noise Transistor:Collector-Emitter Volt (Vceo): 45V.Collector Current (Ic): 0.1A.hfe: 110-800 @ 2mA.Power Dissipation (Ptot): 500mW.Current-Gain-Bandwidth..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BC559 PNP General Purpose Transistor:Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.1A.hfe: 120-800 @ 2mA.Power Dissipation (Ptot): 625mW.Current-Gain-Ban..