Generic

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2222 NPN Bipolar Transistor TO-18 Metal Package:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.8A.Power Dissipation (Pto..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2221 NPN High Speed Switch Transistor:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.8A.hfe: 40-120 @ 10mA.Power Dissipa..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of 2N2219 NPN High Speed Switch Transistor:Collector-Emitter Volt (Vceo): 30V.Collector-Base Volt (Vcbo): 60V.Collector Current (Ic): 0.8A.hfe: 75 @ 10mA.Power Dissipation..

The zener diode is a sharply break down voltage diode which allows current to flow in the forward direction in the same manner as an ideal diode, but also permits it to flow in the reverse direction when the voltage is above a certain value known as the breakdown voltage.Features of 1N970 24V 400mW ..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.8Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 65VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 1.0Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.5APower Dissipation (Ptot): 3000mWCurrent-Gain-Bandwidth (ftotal): 70MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 0.5Ahfe: 100-300 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 70MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 0.5Ahfe: 40-120 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 80MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 1.0Ahfe: 60-142 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 1.0Ahfe: 40-123 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 35VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 1.0Ahfe: 30-112 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 40VCollector Current (Ic): 0.6Ahfe: 40 @ 150mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector-Base Volt (Vcbo): 250VCollector Current (Ic): 0.05Ahfe: 50 @ 25mAPower Dissipation (Ptot): 1.6WCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

The BF495 is an NPN (Negative-Positive-Negative) medium frequency transistor commonly available in a pack of five. Transistors are electronic devices that can amplify or switch electronic signals, and they are widely used in various electronic circuits.FeaturesCollector-Emitter Volt (Vceo): 20VColle..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.03Ahfe: 67-220 @ 1mAPower Dissipation (Ptot): 300mWCurrent-Gain-Bandwidth (ftotal): 120MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector-Base Volt (Vcbo): 300VCollector Current (Ic): 0.1Ahfe: 50 @ 25mAPower Dissipation (Ptot): 1.8WCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector-Base Volt (Vcbo): 300VCollector Current (Ic): 0.1Ahfe: 26 @ 30mAPower Dissipation (Ptot): 6WCurrent-Gain-Bandwidth (ftotal): 90MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector-Base Volt (Vcbo): 250VCollector Current (Ic): 0.1Ahfe: 26 @ 30mAPower Dissipation (Ptot): 6WType: PNP..