Generic

The 2N3553 is an NPN (Negative-Positive-Negative) VHF-UHF transistor that is commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N3553 is specifically designed for applications in the very high frequency (VHF) and ultra-high..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pACommon Mode Rejection Ratio: 90 dBSlew Rate: 9 V/µsLow Supply Current: 6mA..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pACommon Mode Rejection Ratio: 90 dBSlew Rate: 9 V/µsLow Supply Current: 6mA..

Features of JST41Z 800B TRIACGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 800VOn-State Current (It): 40.0AGate Current (Igt): 50mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesP-Channel MOSFET in Input Circuit for High Input ImpedanceCMOS Output Stage for Output to Either Supply RailsOffset Voltage: 5mV maxInput Offset Current: 20pAInput Bias Current: 400 nAHigh Slew Rate: 30 V/µsCommon Mode Rejection Ratio: 90 dB..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 40.0AGate Current (Igt): 50mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 25.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 25.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.5V Peak Off-State Voltage(Vdrm): 1000V On-State Current (It): 16.0A Gate Current (Igt): 35mA Av. Gate Power Dissipation (Pg): 1W Typical Voltage Change over Time (dV/dT): 250V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 12.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 12.0AGate Current (Igt): 35mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 500V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.3VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 8.0AGate Current (Igt): 25mAAv. Gate Power Dissipation (Pg): 1WTypical Voltage Change over Time (dV/dT): 200V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.5VPeak Off-State Voltage(Vdrm): 600VOn-State Current (It): 6.0AGate Current (Igt): 10mATypical Voltage Change over Time (dV/dT): 10V/µs..

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This 15 Amp  bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed, temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from ..

Q6008L5 8 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays.Q6008L5 FeaturesRoHS CompliantGlass – passivated junctionsVoltage capability up t..

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A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesInternally CompensatedPin-to-Pin Compatible with LM358Input Offset Voltage: 5 mVInput Offset Current: 100 nAIn..