Generic

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6052 is Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low-frequency switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 12.0Ahfe: 750-18,000 @ 6.0A..

2N6045 is a TO-220C package complement to type 2N6040/6041/6042 Darlington High DC current gain Low collector saturation voltage use for general-purpose amplifier and low-speed switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 8..

2N6043 is Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching Darlington applications.FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 6..

2N6042 is PNP power darlington transistor used in power switching and amplifiers.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 8.0Ahfe: 1,000-20,000 @ 3.0APower Dissipation (Ptot): 75WType: PNP..

IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost. Hence, it is widely used in industrial applications for power dissipation levels up to 43W.IRF510 MOSFET is capable to withstand drain-to-so..

2N6028 Programmable Unijunction Transistor (UJT) 40V 300mW TO-92 Package. Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These ..

FeaturesAnode-Cathode Volt (Vak): ±40VGate-Cathode Forward Volt (Vgkf): 40VDC Forward Anode Current (It): 0.15ADC Gate Current (Ig): ±50mAPower Dissipation (Ptot): 300mWType: Unijunction..

FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 150-700 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 160VCollector-Base Volt (Vcbo): 180VCollector Current (Ic): 0.6Ahfe: 80-250 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 140VCollector-Base Volt (Vcbo): 160VCollector Current (Ic): 0.6Ahfe: 60-250 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector-Base Volt (Vcbo): 350VCollector Current (Ic): 1.0Ahfe: 30-120 @ 50mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 15MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 200VCollector-Base Volt (Vcbo): 200VCollector Current (Ic): 1.0Ahfe: 30-150 @ 50mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 15MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 160VCollector Current (Ic): 0.2Ahfe: 60-240 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 130VCollector Current (Ic): 0.6Ahfe: 40-180 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 400MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 75VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.2Ahfe: 30-130 @ 500mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 1.2Ahfe: 40-250 @ 500mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 1.2Ahfe: 7,000-70,000 @ 2mAPower Dissipation (Ptot): 625mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.3Ahfe: 2,000-20,000 @ 2mAPower Dissipation (Ptot): 400mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 100mAhfe: 50-800 @ 2mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 150MHzType: PNP..