Generic

The 2SA950 is a PNP general-purpose transistor that is commonly available in packs of five. This transistor is designed for various applications that require amplification, switching, and signal processing.FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 35VCollector Current (Ic..

2SA933 is PNP General Purpose Transistor having linear Hybrid parameter forward current gain (hfe). 2SA933 is complementary to 2SC2412K.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.15Ahfe: 120-560 @ 1mAPower Dissipation (Ptot): 300mWCurrent-Gain-..

FeaturesDrain-Source Volt (Vds): 200VGate-Source Volt (Vgs): 200VGate-Source Volt (Vgs): 20VDrain Current (Id): 3.3APower Dissipation (Ptot): 43WType: N-Channel..

2SA872 PNP Low-Frequency Transistor is designed for Low-frequency low noise amplifier applications. 2SA872 is complementary pair with 2SC1775/A.FeaturesCollector-Emitter Volt (Vceo): 90VCollector-Base Volt (Vcbo): 90VCollector Current (Ic): 0.05Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 300mWCurre..

2SA844 PNP General Purpose Transistor is designed for the Low-frequency amplifier Application. 2SA844 is a Complement to Type 2SC1683FeaturesCollector-Emitter Volt (Vceo): 55VCollector-Base Volt (Vcbo): 55VCollector Current (Ic): 0.1Ahfe: 160-800 @ 2mAPower Dissipation (Ptot): 300mWCurrent-Gain..

2SA950 PNP Audio Amplifier Transistor is designed for Low-frequency amplifier and Complementary pair with 2SC1213.FeaturesCollector-Emitter Volt (Vceo): 35VCollector-Base Volt (Vcbo): 35VCollector Current (Ic): 0.5Ahfe: 60-320 @ 10mAPower Dissipation (Ptot): 400mWType: PNP..

A diode is a two-terminal electronic component with asymmetric conductance; it has low  resistance to current in one direction, and high  resistance in the other direction.FeaturesDrain-Source Volt (Vds): 100VGate-Source Volt (Vgs): 100VGate-Source Volt (Vgs): 20VDrain Current (Id): 30APow..

2N6517 NPN High-Voltage TransistorFeaturesCollector-Emitter Volt (Vceo): 350VCollector-Base Volt (Vcbo): 350VCollector Current (Ic): 0.5Ahfe: 30-200 @ 30mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 40MHzType: NPN..

FeaturesDrain-Source Volt (Vds): 100VGate-Source Volt (Vgs): 100VGate-Source Volt (Vgs): 20VDrain Current (Id): 10APower Dissipation (Ptot): 70WType: N-Channel..

2N6427 NPN Darlington Transistor is designed for applications requiring extremely high current gain at collector currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 20,000-200,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6052 is Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general-purpose amplifier and low-frequency switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 12.0Ahfe: 750-18,000 @ 6.0A..

2N6045 is a TO-220C package complement to type 2N6040/6041/6042 Darlington High DC current gain Low collector saturation voltage use for general-purpose amplifier and low-speed switching applications.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 8..

2N6043 is Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching Darlington applications.FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 6..

2N6042 is PNP power darlington transistor used in power switching and amplifiers.FeaturesCollector-Emitter Volt (Vceo): 100VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 8.0Ahfe: 1,000-20,000 @ 3.0APower Dissipation (Ptot): 75WType: PNP..

IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost. Hence, it is widely used in industrial applications for power dissipation levels up to 43W.IRF510 MOSFET is capable to withstand drain-to-so..

2N6028 Programmable Unijunction Transistor (UJT) 40V 300mW TO-92 Package. Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These ..

FeaturesAnode-Cathode Volt (Vak): ±40VGate-Cathode Forward Volt (Vgkf): 40VDC Forward Anode Current (It): 0.15ADC Gate Current (Ig): ±50mAPower Dissipation (Ptot): 300mWType: Unijunction..

FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 150-700 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: NPN..

FeaturesCollector-Emitter Volt (Vceo): 160VCollector-Base Volt (Vcbo): 180VCollector Current (Ic): 0.6Ahfe: 80-250 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: NPN..