Generic

The 2SB739 is a PNP (Positive-Negative-Positive) general-purpose transistor. Transistors are electronic devices used to amplify or switch electronic signals and are fundamental building blocks of many electronic circuits.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 20VCollec..

2SB698 PNP General Purpose Transistor is designed for the 1w audio output applications.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.7Ahfe: 60-560 @ 50mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

The 2SB647 is a PNP general-purpose transistor that is commonly used in a wide range of electronic applications. This transistor is designed to handle moderate power and voltage levels, making it suitable for amplification, switching, and signal processing circuits.FeaturesCollector-Emitter Volt (Vc..

The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation.Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum)Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A)Multicomp Pro products are rated 4.6 out of 5 stars12 mo..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 1.0Ahfe: 85-240 @ 500mAPower Dissipation (Ptot): 900mWCurrent-Gain-Bandwidth (ftotal): 350MHzType: PNP..

The 2SB560 is epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier useFeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.0Ahfe: 60-560 @ 50mAPow..

The 2SB544 is a PNP general-purpose transistor commonly used in a variety of electronic applications. This transistor is designed to handle moderate power and voltage levels, making it suitable for amplification, switching, and signal processing circuits.FeaturesCollector-Emitter Volt (Vceo): 25VCol..

2SA1515 PNP General Purpose Transistor is designed for the Low Collector-Emitter Saturation Voltage. 2SA1515 complementary to 2SD1858.FeaturesCollector-Emitter Volt (Vceo): 32VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 1.0Ahfe: 120-390 @ 100mAPower Dissipation (Ptot): 300mWCurrent-Gain-B..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.2Ahfe: 100-800 @ 1mAPower Dissipation (Ptot): 300mWCurrent-Gain-Bandwidth (ftotal): 200MHzType: PNP..

FeaturesDrain-Source Volt (Vds): 500VDrain-Gate Volt (Vdg): 500VGate-Source Volt (Vgs): 20VDrain Current (Id): 8.0APower Dissipation (Ptot): 125WType: N-Channel..

2SA1316 PNP General Purpose Transistor is designed for low noise audio amplifier applications. 2SA1316 is complementary to 2Sc3329.FeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 0.1Ahfe: 200-700 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwi..

2SA1309A PNP General Purpose Transistor is designed for low-frequency amplification applications. 2SA1309A is complementary to 2SC3311A.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 160-460 @ 2mAPower Dissipation (Ptot): 300mWCurrent-Gain-B..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 50VCollector Current (Ic): 0.15Ahfe: 70-400 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwidth (ftotal): 80MHzType: PNP..

2SA1207 PNP General Purpose Transistor is designed for the High-Voltage Switching, AF 60W Pre driver applications. 2SA1207 is complementary to 2SC2909.FeaturesCollector-Emitter Volt (Vceo): 160VCollector-Base Volt (Vcbo): 180VCollector Current (Ic): 0.07Ahfe: 100-400 @ 10mAPower Dissipation (Ptot): ..

2SA1175 PNP General Purpose Transistor is designed for the driver stage of AF amplifier applications. 2SA1175 is complementary to 2SC2785.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 110-600 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain..

FeaturesDrain-Source Volt (Vds): 400VDrain-Gate Volt (Vdg): 400VGate-Source Volt (Vgs): 20VDrain Current (Id): 10APower Dissipation (Ptot): 125WType: N-Channel..

2SA1123 PNP General Purpose Transistor is designed for low-frequency high breakdown voltage amplification applications. 2SA1123 complementary to 2SC2631.FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 150VCollector Current (Ic): 0.05Ahfe: 130-450 @ 10mAPower Dissipation (Ptot)..

2SA1084 PNP Low Noise Transistor is designed for Low-frequency low noise amplifier applications. 2SA1084 is complementary to 2SC2545.FeaturesCollector-Emitter Volt (Vceo): -90VCollector-Base Volt (Vcbo): -90VCollector Current (Ic): -0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-B..

FeaturesDrain-Source Volt (Vds): 400VGate-Source Volt (Vgs): 20VDrain Current (Id): 3.3APower Dissipation (Ptot): 50WType: N-Channel..

2SA1082 PNP General Purpose Transistor is designed for Low-frequency amplifier applications. 2SA1082 is complementary to 2SC2396.FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwi..