Generic

This transistor falls into the category of power transistors. Power transistors can withstand high power dissipation without damage. Due to the limitations of the transistor package type, it is always required that a power transistor be mounted on a suitable heat sink in other to harness the device’..

The 2SB739 is a PNP (Positive-Negative-Positive) general-purpose transistor. Transistors are electronic devices used to amplify or switch electronic signals and are fundamental building blocks of many electronic circuits.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 20VCollec..

2SB698 PNP General Purpose Transistor is designed for the 1w audio output applications.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.7Ahfe: 60-560 @ 50mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

The 2SB647 is a PNP general-purpose transistor that is commonly used in a wide range of electronic applications. This transistor is designed to handle moderate power and voltage levels, making it suitable for amplification, switching, and signal processing circuits.FeaturesCollector-Emitter Volt (Vc..

The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation.Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum)Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A)Multicomp Pro products are rated 4.6 out of 5 stars12 mo..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 1.0Ahfe: 85-240 @ 500mAPower Dissipation (Ptot): 900mWCurrent-Gain-Bandwidth (ftotal): 350MHzType: PNP..

The 2SB560 is epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier useFeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.0Ahfe: 60-560 @ 50mAPow..

The 2SB544 is a PNP general-purpose transistor commonly used in a variety of electronic applications. This transistor is designed to handle moderate power and voltage levels, making it suitable for amplification, switching, and signal processing circuits.FeaturesCollector-Emitter Volt (Vceo): 25VCol..

2SA1515 PNP General Purpose Transistor is designed for the Low Collector-Emitter Saturation Voltage. 2SA1515 complementary to 2SD1858.FeaturesCollector-Emitter Volt (Vceo): 32VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 1.0Ahfe: 120-390 @ 100mAPower Dissipation (Ptot): 300mWCurrent-Gain-B..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.2Ahfe: 100-800 @ 1mAPower Dissipation (Ptot): 300mWCurrent-Gain-Bandwidth (ftotal): 200MHzType: PNP..

FeaturesDrain-Source Volt (Vds): 500VDrain-Gate Volt (Vdg): 500VGate-Source Volt (Vgs): 20VDrain Current (Id): 8.0APower Dissipation (Ptot): 125WType: N-Channel..

2SA1316 PNP General Purpose Transistor is designed for low noise audio amplifier applications. 2SA1316 is complementary to 2Sc3329.FeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 0.1Ahfe: 200-700 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwi..

2SA1309A PNP General Purpose Transistor is designed for low-frequency amplification applications. 2SA1309A is complementary to 2SC3311A.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 160-460 @ 2mAPower Dissipation (Ptot): 300mWCurrent-Gain-B..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 50VCollector Current (Ic): 0.15Ahfe: 70-400 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwidth (ftotal): 80MHzType: PNP..

2SA1207 PNP General Purpose Transistor is designed for the High-Voltage Switching, AF 60W Pre driver applications. 2SA1207 is complementary to 2SC2909.FeaturesCollector-Emitter Volt (Vceo): 160VCollector-Base Volt (Vcbo): 180VCollector Current (Ic): 0.07Ahfe: 100-400 @ 10mAPower Dissipation (Ptot): ..

2SA1175 PNP General Purpose Transistor is designed for the driver stage of AF amplifier applications. 2SA1175 is complementary to 2SC2785.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 110-600 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain..

FeaturesDrain-Source Volt (Vds): 400VDrain-Gate Volt (Vdg): 400VGate-Source Volt (Vgs): 20VDrain Current (Id): 10APower Dissipation (Ptot): 125WType: N-Channel..

2SA1123 PNP General Purpose Transistor is designed for low-frequency high breakdown voltage amplification applications. 2SA1123 complementary to 2SC2631.FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 150VCollector Current (Ic): 0.05Ahfe: 130-450 @ 10mAPower Dissipation (Ptot)..

2SA1084 PNP Low Noise Transistor is designed for Low-frequency low noise amplifier applications. 2SA1084 is complementary to 2SC2545.FeaturesCollector-Emitter Volt (Vceo): -90VCollector-Base Volt (Vcbo): -90VCollector Current (Ic): -0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-B..

FeaturesDrain-Source Volt (Vds): 400VGate-Source Volt (Vgs): 20VDrain Current (Id): 3.3APower Dissipation (Ptot): 50WType: N-Channel..