Generic

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.5Ahfe: 50 @ 10mAPower Dissipation (Ptot): 625mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.2Ahfe: 100-300 @ 10mAPower Dissipation (Ptot): 625mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 60VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.8Ahfe: 100-400 @ 10mAPower Dissipation (Ptot): 625mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 45VCollector-Base Volt (Vcbo): 45VCollector Current (Ic): 0.8Ahfe: 100-300 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: PNP..

FeaturesCollector-Emitter Volt (Vceo): 45VCollector-Base Volt (Vcbo): 45VCollector Current (Ic): 0.8Ahfe: 100-300 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: PNP..

FeaturesCollector-Emitter Volt (Vceo): 15VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.2Ahfe: 40-120 @ 10mAPower Dissipation (Ptot): 350mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 45VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.5Ahfe: 200-450 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 45VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 0.5Ahfe: 100-450 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

The TIP50 NPN High Voltage Transistor is silicon Multi epitaxial NPN Planar transistors mounted in Jedec TO-220 plastic package. It is intended for use in linear and switching applicationsTIP50 Key Features250 V to 400 V (Min) — VCEO(sus)1 A Rated Collector CurrentPopular TO–220 Plastic PackageType ..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5AFe: 230-600 @ 500mAPower Dissipation (Ptot): 750mWCurrent-Gain-Bandwidth (ftotal): 150MHzType: PNP..

2SB1237 PNP General Purpose Transistor is designed for the Low saturation voltage. 2SB1237 complementary to 2SD1664.FeaturesCollector-Emitter Volt (Vceo): 32VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 1.0Ahfe: 82-390 @ 100mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal):..

FeaturesCollector-Emitter Volt (Vceo): 16VCollector-Base Volt (Vcbo): 20VCollector Current (Ic): 2.0Ahfe: 135-650 @ 100mAPower Dissipation (Ptot): 750mWCurrent-Gain-Bandwidth (ftotal): 180MHzType: PNP..

This transistor falls into the category of power transistors. Power transistors can withstand high power dissipation without damage. Due to the limitations of the transistor package type, it is always required that a power transistor be mounted on a suitable heat sink in other to harness the device’..

The 2SB739 is a PNP (Positive-Negative-Positive) general-purpose transistor. Transistors are electronic devices used to amplify or switch electronic signals and are fundamental building blocks of many electronic circuits.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 20VCollec..

2SB698 PNP General Purpose Transistor is designed for the 1w audio output applications.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.7Ahfe: 60-560 @ 50mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

The 2SB647 is a PNP general-purpose transistor that is commonly used in a wide range of electronic applications. This transistor is designed to handle moderate power and voltage levels, making it suitable for amplification, switching, and signal processing circuits.FeaturesCollector-Emitter Volt (Vc..

The TIP150 is a NPN Darlington Power Transistor with 300V collector-emitter voltage and 80W power dissipation.Collector-emitter sustaining voltage (Vceo (sus) = 30V minimum)Collector-emitter saturation voltage(Vce (sat) = 2V maximum at Ic = 5A)Multicomp Pro products are rated 4.6 out of 5 stars12 mo..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 1.0Ahfe: 85-240 @ 500mAPower Dissipation (Ptot): 900mWCurrent-Gain-Bandwidth (ftotal): 350MHzType: PNP..

The 2SB560 is epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier useFeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.0Ahfe: 60-560 @ 50mAPow..

The 2SB544 is a PNP general-purpose transistor commonly used in a variety of electronic applications. This transistor is designed to handle moderate power and voltage levels, making it suitable for amplification, switching, and signal processing circuits.FeaturesCollector-Emitter Volt (Vceo): 25VCol..