Generic

BD678 is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple dr..

BD677 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple dr..

BD675 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple dr..

BD242C is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..

BD240C is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..

BD239C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..

BD238 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..

BD237 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..

BD139 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..

BD138 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..

BD137 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..

BD136 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..

BD135 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..

TIP42C is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageS..

TIP41C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..

Torch bulb holder with screw type bulb compatibility and metal screw wire fastener.Features of Torch Bulb HolderGood quality plastic for heat resistance.Two holes for mounting on a surface.Applications of Torch Bulb HolderRobo head lights.DIY projects requiring a torch bulb.Also Searched as: torch b..

The 9v Battery Snap Connector with DC Jack with Battery Connector Cap is widely used for project purposes. The 9V Battery Snap Connector with Power Plug provides the ability to conveniently use a 9V battery to power many common boards and modules such as the popular Arduino and compatible microcontr..

The 8 pin IC Socket or 8 pin IC base acts as a removable 8 pin IC holder that can be soldered directly to the PCB while the IC remains interchangeable. Required for sensitive ICs which are temperature sensitive and cannot be soldered to the board or at places where the IC needs to be replaced and fo..

The polyester film capacitor is a non-polarized capacitor used to store charge in it in the form of electrostatic field.Features of 33000 Pico farad 630v 2J333K Polyster Film Capacitor (Pack of 10):Capacitance: 33000 Pico farad.Voltage: 630 volt.Code: 2j333k.Type: polyester film.Applications of 3300..

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.Features of 2N3904 NPN Transistor:Operating voltage: 2V to 60V.Peak Power O/P: 100mA.Operating range: -65oC to 150oC.Application of 2N3904 NPN Tran..