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MJE350 PNP Bipolar Power Transistor 300V 500mA TO-126 Package

MJE350 PNP Bipolar Power Transistor 300V 500mA TO-126 Package

MJE350 PNP Bipolar Power Transistor 300V 500mA TO-126 Package

Availability: In stock

Brand: Generic

SKU: RM005508

₹ 14.00
Warehouse Code: R00012-S01-P04-Z01

Product Highlights:-

  • Transistor Polarity PNP
  • Collector−Emitter Voltage (VCEO) 300V
  • Collector−Base Voltage (VCBO) 300V
  • Emitter−Base Voltage (VEBO) 3V
  • Continuous Collector Current (Ic) 0.5A
  • Power Dissipation (Pd) 20.8W
  • Operating Temperature Range -65 - 150°C
  • DC Current Gain (hFE) 30-240
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MJE350 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.


Features:-

  • High DC gain
  • The low collector−emitter saturation voltage
  • High current−gain − bandwidth product
  • Annular construction for low leakage
  • Complementary NPN - PNP devices
*Note: Product may be differ as per shown in image