BF Series Transistors

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 1.0Ahfe: 60-142 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 1.0Ahfe: 40-123 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 35VCollector-Base Volt (Vcbo): 80VCollector Current (Ic): 1.0Ahfe: 30-112 @ 150mAPower Dissipation (Ptot): 800mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 40VCollector Current (Ic): 0.6Ahfe: 40 @ 150mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector-Base Volt (Vcbo): 250VCollector Current (Ic): 0.05Ahfe: 50 @ 25mAPower Dissipation (Ptot): 1.6WCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

The BF495 is an NPN (Negative-Positive-Negative) medium frequency transistor commonly available in a pack of five. Transistors are electronic devices that can amplify or switch electronic signals, and they are widely used in various electronic circuits.FeaturesCollector-Emitter Volt (Vceo): 20VColle..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.03Ahfe: 67-220 @ 1mAPower Dissipation (Ptot): 300mWCurrent-Gain-Bandwidth (ftotal): 120MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector-Base Volt (Vcbo): 300VCollector Current (Ic): 0.1Ahfe: 50 @ 25mAPower Dissipation (Ptot): 1.8WCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector-Base Volt (Vcbo): 300VCollector Current (Ic): 0.1Ahfe: 26 @ 30mAPower Dissipation (Ptot): 6WCurrent-Gain-Bandwidth (ftotal): 90MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector-Base Volt (Vcbo): 250VCollector Current (Ic): 0.1Ahfe: 26 @ 30mAPower Dissipation (Ptot): 6WType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 250VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 300VCollector Current (Ic): 0.5Ahfe: 50 @ 25mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 60MHzType: PNP..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF370 NPN Medium Frequency Transistor :Collector-Emitter Volt (Vceo): 15V.Collector Current (Ic): 0.1A.hfe: 40 @ 1mA.Power Dissipation (Ptot): 500mW.Current-Gain-Bandwi..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF324 PNP Medium Frequency Transistor :Collector-Emitter Volt (Vceo): 30V.Collector Current (Ic): 0.025A.hfe: 25 @ 4mA.Power Dissipation (Ptot): 300mW.Current-Gain-Band..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF259 NPN High Voltage Transistor:Collector-Emitter Volt (Vceo): 300V.Collector-Base Volt (Vcbo): 300V.Collector Current (Ic): 0.1A.hfe: 25 @ 30mA.Power Dissipation (Pt..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF258 NPN High Voltage Transistor:Collector-Emitter Volt (Vceo): 250V.Collector-Base Volt (Vcbo): 250V.Collector Current (Ic): 0.1A.hfe: 25 @ 30mA.Power Dissipation (Pt..

The metal–oxide–semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.Features of BF256 N-Channel RF Transistor:Drain-Gate Voltage (Vdg): 30V.Gate-Source Voltage (Vgs): 30V.Gate-Source Voltage (Vgs-off): 8V.Drain Current (Idss): 18mA.Power ..

The metal–oxide–semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.Features of BF246 N-Channel Transistor:Drain-Source Voltage (Vds): 40V.Gate-Source Voltage (Vgs-off): 25V.Drain Current (Idss): 140mA.Power Dissipation (Ptot): 625mW.Type..