BF Series Transistors

The metal–oxide–semiconductor field-effect transistor is a type of transistor used for amplifying or switching electronic signals.Features of BF246 N-Channel Transistor:Drain-Source Voltage (Vds): 40V.Gate-Source Voltage (Vgs-off): 25V.Drain Current (Idss): 140mA.Power Dissipation (Ptot): 625mW.Type..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF245A N-Channel Transistor:Drain-Source Voltage (Vds): 40V.Gate-Source Voltage (Vgs-off): 8V.Drain Current (Idss): 25mA.Power Dissipation (Ptot): 300mW.Cut-Off Frequen..

Features of BF244A N-Channel RF Amplifier :Drain-Gate Voltage (Vdg) : 30V.Gate-Source Voltage (Vgs) : -30V.Drain Current (Idss) : 50mA.Power Dissipation (Ptot ) : 350mW.Cut-Off Frequency (fgfs) : 700MHz.Type : N-Channel...

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF240 NPN AM FM Transistor:Collector-Emitter Volt (Vceo): 40V.Collector Current (Ic): 0.025A.hfe: 65-220 @ 1mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth (f..

The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.Features of BF199 NPN RF Transistor:Collector-Emitter Volt (Vceo): 25V.Collector Current (Ic): 0.1A.hfe: 85 @ 7mA.Power Dissipation (Ptot): 350mW.Current-Gain-Bandwidth (ftotal): 7..