PSA10N65C MOSFET - 600V 10A N-Channel Power MOSFET TO-220F Package

PSA10N65C is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Specifications of PSA10N65C MOSFET - 600V 10A N-Channel Power MOSFET TO-220F Package :

1. Drain-Source Breakdown Voltage min : 600V
2. Gate-Source Threshold Voltage min : 2.0V
3. Gate-Source Threshold Voltage max : 4.0V
4. Gate-Source Leakage max : +100nA
5. Drain-Source On-State Resistance : 0.54Ω