The transistor is a 3 terminal & 2 junction semiconductor device which is used for switching or amplifying purposes.

Features of BF259 NPN High Voltage Transistor:

• Collector-Emitter Volt (Vceo): 300V.
• Collector-Base Volt (Vcbo): 300V.
• Collector Current (Ic): 0.1A.
• hfe: 25 @ 30mA.
• Power Dissipation (Ptot): 5 W.
• Current-Gain-Bandwidth (ftotal): 90MHz.
• Type: NPN.

Applications of BF259 NPN High Voltage Transistor:

• It is used in switching device.
• It is used in amplifying device.
• It is used in DIY kits.
• FM Radio.
• It is used in Electronic projects.