Triac

FeaturesGate Turn-On Voltage (Vgt): 1.5VPeak Off-State Voltage(Vdrm): 500VOn-State Current (It): 12.0AGate Current (Igt): 25mATypical Voltage Change over Time (dV/dT): 250V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.5VPeak Off-State Voltage(Vdrm): 500VOn-State Current (It): 8.0AGate Current (Igt): 25mATypical Voltage Change over Time (dV/dT): 250V/µs..

FeaturesGate Turn-On Voltage (Vgt): 1.5VPeak Off-State Voltage(Vdrm): 500VOn-State Current (It): 4.0AGate Current (Igt): 25mA..

BT134 4 Amp 500V bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays.BT134 4A 500V Features:RoHS CompliantGlass – passivated junctionsVoltage capab..

FeaturesGate Turn-On Voltage (Vgt): 0.7VPeak Off-State Voltage(Vdrm): 500VOn-State Current (It): 1.0AGate Current (Igt): 3.8mA..

2N6344 TRIAC is the primary design for full‐wave AC control applications such as light dimmers, motor controls, heating controls, and power supplies or wherever full‐wave silicon gate controlled solid‐state devices are needed. Triac type thyristors switch from a blocking to a conducting state for ei..

2N6342 TRIAC is the primary design for full‐wave AC control applications such as light dimmers, motor controls, heating controls, and power supplies or wherever full‐wave silicon gate controlled solid‐state devices are needed. Triac type thyristors switch from a blocking to a conducting state for ei..

2N6071 TRIAC is the primary design for full‐wave AC control applications such as light dimmers, motor controls, heating controls, and power supplies or wherever full‐wave silicon gate-controlled solid‐state devices are needed. Triac type thyristors switch from a blocking to a conducting state for ei..

S4004V 4A 400V TRIAC semiconductor is a half-wave unidirectional, gate-controlled rectifier (SCR-thyristor) that complements Teccor’s line of power SCRs. This group of packages offers ratings of 0.8 A to 10 A, and 200 V to 600 V with gate sensitivities of 12 µA to 500 µA. For gate currents in the 10..