Search

2SB698 PNP General Purpose Transistor is designed for the 1w audio output applications.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.7Ahfe: 60-560 @ 50mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

The 2SB560 is epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable universal AF power amplifier useFeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.0Ahfe: 60-560 @ 50mAPow..

The 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etcFeaturesHigh BVCEOHigh DC current gainLarge continuous collector curre..

2N6427 NPN Darlington Transistor is designed for applications requiring extremely high current gain at collector currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 20,000-200,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

The 2N4036 is a PNP Silicon Transistor designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.2N4036 Key FeaturesCollector-Emitter Volt (Vceo): 65VCollector-Base ..