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2SB698 PNP General Purpose Transistor is designed for the 1w audio output applications.FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.7Ahfe: 60-560 @ 50mAPower Dissipation (Ptot): 600mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

2SA1207 PNP General Purpose Transistor is designed for the High-Voltage Switching, AF 60W Pre driver applications. 2SA1207 is complementary to 2SC2909.FeaturesCollector-Emitter Volt (Vceo): 160VCollector-Base Volt (Vcbo): 180VCollector Current (Ic): 0.07Ahfe: 100-400 @ 10mAPower Dissipation (Ptot): ..

2SA1175 PNP General Purpose Transistor is designed for the driver stage of AF amplifier applications. 2SA1175 is complementary to 2SC2785.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.1Ahfe: 110-600 @ 1mAPower Dissipation (Ptot): 250mWCurrent-Gain..

2SA1123 PNP General Purpose Transistor is designed for low-frequency high breakdown voltage amplification applications. 2SA1123 complementary to 2SC2631.FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 150VCollector Current (Ic): 0.05Ahfe: 130-450 @ 10mAPower Dissipation (Ptot)..

2SA1084 PNP Low Noise Transistor is designed for Low-frequency low noise amplifier applications. 2SA1084 is complementary to 2SC2545.FeaturesCollector-Emitter Volt (Vceo): -90VCollector-Base Volt (Vcbo): -90VCollector Current (Ic): -0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-B..

2SA1082 PNP General Purpose Transistor is designed for Low-frequency amplifier applications. 2SA1082 is complementary to 2SC2396.FeaturesCollector-Emitter Volt (Vceo): 120VCollector-Base Volt (Vcbo): 120VCollector Current (Ic): 0.1Ahfe: 250-800 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandwi..

2SA1015 PNP General Purpose Transistor is designed for the driver stage amplifier applications. 2SA1015 is complementary to 2SC1815.FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 50VCollector Current (Ic): 0.15Ahfe: 70-400 @ 2mAPower Dissipation (Ptot): 400mWCurrent-Gain-Bandw..

The 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etcFeaturesHigh BVCEOHigh DC current gainLarge continuous collector curre..

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..