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The TIP31 is a standard type of NPN bipolar junction transistor used for medium power applications. TIP31 transistors are designated as TIP31A, TIP31B, and TIP31 to indicate increasing collector-base and collector-emitter breakdown voltage ratings. The TIP31 is packaged in a TO-220 case.Features of ..

A C945 transistor is a type of NPN bipolar junction transistor. Circuits where a low-current, high-speed transistor is required will employ a transistor such as C945 transistor. Circuits such as a small-signal amplifier or a high-speed switching circuit might employ one or more C945 transistors.Feat..

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.Features of 2N3904 NPN Transistor:Operating voltage: 2V to 60V.Peak Power O/P: 100mA.Operating range: -65oC to 150oC.Application of 2N3904 NPN Tran..

The TIP50 NPN High Voltage Transistor is silicon Multi epitaxial NPN Planar transistors mounted in Jedec TO-220 plastic package. It is intended for use in linear and switching applicationsTIP50 Key Features250 V to 400 V (Min) — VCEO(sus)1 A Rated Collector CurrentPopular TO–220 Plastic PackageType ..

2SA1123 PNP General Purpose Transistor is designed for low-frequency high breakdown voltage amplification applications. 2SA1123 complementary to 2SC2631.FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 150VCollector Current (Ic): 0.05Ahfe: 130-450 @ 10mAPower Dissipation (Ptot)..

The 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The 2SA1013 is suitable for power switching and color TV vertical deflection output, etcFeaturesHigh BVCEOHigh DC current gainLarge continuous collector curre..

2N6517 NPN High-Voltage TransistorFeaturesCollector-Emitter Volt (Vceo): 350VCollector-Base Volt (Vcbo): 350VCollector Current (Ic): 0.5Ahfe: 30-200 @ 30mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 40MHzType: NPN..

2N6427 NPN Darlington Transistor is designed for applications requiring extremely high current gain at collector currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 20,000-200,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

The 2N4410 is an NPN (Negative-Positive-Negative) general-purpose transistor. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N4410 is specifically designed for general-purpose applications.FeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo)..

Introducing the STA401A NPN Darlington Transistor with Built-In Avalanche Diode – your ultimate solution for precision amplification and enhanced protection in electronic circuits. Designed with cutting-edge technology and meticulous craftsmanship, this versatile component empowers your designs with..