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2N6427 NPN Darlington Transistor is designed for applications requiring extremely high current gain at collector currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 20,000-200,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

2N6426 NPN Darlington Transistor is designed for applications requiring extremely high current gain at currents to 1.0 AFeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.5Ahfe: 30,000-300,000 @ 100mAPower Dissipation (Ptot): 625mWType: NPN..

This is a Darlington pair transistor inbuilt in one transistor package. This device is designed for applications requiring extremely high current gain at currents to 1.0A.Features of BC517 NPN Darlington Transistor:VCEO Collector-Emitter Voltage 30 V.VCBO Collector-Base Voltage 40 V.VEBO Emitter-Bas..

Introducing the STA401A NPN Darlington Transistor with Built-In Avalanche Diode – your ultimate solution for precision amplification and enhanced protection in electronic circuits. Designed with cutting-edge technology and meticulous craftsmanship, this versatile component empowers your designs with..