5800-101-RC-Axial Power InductorNote:Product Images are shown for illustrative purposes only and may differ from the actual product.For Technical Specifications about the IC go through the Datasheet in the Attachment section.Package Includes:1 x 5800-101-RC-Axial Power Inductor..
5258-RC-Axial Power InductorNote:Product Images are shown for illustrative purposes only and may differ from the actual product.For Technical Specifications about the IC go through the Datasheet in the Attachment section.Package Includes:1 x 5258-RC-Axial Power Inductor..
5254-RC-Axial Power InductorNote:Product Images are shown for illustrative purposes only and may differ from the actual product.For Technical Specifications about the IC go through the Datasheet in the Attachment section.Package Includes:1 x 5254-RC-Axial Power Inductor..
Build your own music system with dual 30W of stereo output. TPA3110 XH-A232 Dual Channel Digital Power Amplifier Board is a newly designed digital audio amplifier board with fine quality is practical to install and use also has good performance. It features a high-efficiency class D audio power ampl..
IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220 PackageIRFB4110 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored ..
Description:IRFP054N is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performanc..
Description:IRFBC30 is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance..
BD678 is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple dr..
BD677 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple dr..
BD675 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple dr..
BD242C is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..
BD240C is a three-layer PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..
BD239C is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSimple d..
BD238 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..
BD237 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..
BD139 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..
BD138 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.Features:-Low saturation voltageSi..