2N Series Transistors

FeaturesCollector-Emitter Volt (Vceo): 75VCollector-Base Volt (Vcbo): 100VCollector Current (Ic): 1.2Ahfe: 30-130 @ 500mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 50VCollector-Base Volt (Vcbo): 75VCollector Current (Ic): 1.2Ahfe: 40-250 @ 500mAPower Dissipation (Ptot): 1000mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: NPN..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 1.2Ahfe: 7,000-70,000 @ 2mAPower Dissipation (Ptot): 625mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.3Ahfe: 2,000-20,000 @ 2mAPower Dissipation (Ptot): 400mWType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 20VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 100mAhfe: 50-800 @ 2mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 150MHzType: PNP..

2N5210 NPN General-Purpose Amplifier and Switching Transistor TO-92 Package with molded leads and lead layout of EBC.FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 25VCollector Current (Ic): 0.5Ahfe: 100-500 @ 10mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal):..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.1Ahfe: 450 @ 1mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 35VCollector Current (Ic): 0.05Ahfe: 350 @ 1mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 50MHzType: PNP..

The 2N5087 is a molded epoxy silicon PNP signal transistor designed for low-level, low-noise amplifier applications. The 2N5087 features high gain and low noise -- the max noise figure of the 2N5087 is only 2.0dB, and the max DC current gain is up to 800, which ensures that the 2N5087 is capable of ..

FeaturesCollector-Emitter Volt (Vceo): 150VCollector-Base Volt (Vcbo): 150VCollector Current (Ic): 20.0Ahfe: 20-100 @ 12.0APower Dissipation (Ptot): 140WType: NPN..

2N4923 Key FeaturesWith TO-126 packageComplement to type 2N4918/4919/4920Excellent safe operating areaLow collector saturation voltage..

2N4922 Key FeaturesWith TO-126 packageComplement to type 2N4918,2N4919 2N4920Excellent safe operating areaLow collector-emitter saturation voltage..

FeaturesCollector-Emitter Volt (Vceo): 20VEmitter-Base Volt (Vebo): 2.0VCollector Current (Ic): 0.4APower Dissipation (Ptot): 3500mWPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 500MHzType: PNP..

The 2N4410 is an NPN (Negative-Positive-Negative) general-purpose transistor. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N4410 is specifically designed for general-purpose applications.FeaturesCollector-Emitter Volt (Vceo): 80VCollector-Base Volt (Vcbo)..

FeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 40VCollector Current (Ic): 0.6Ahfe: 100-300 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 200MHzType: PNP..

FeaturesCollector-Emitter Volt (Vceo): 40VCollector-Base Volt (Vcbo): 60VCollector Current (Ic): 0.6Ahfe: 100-300 @ 150mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 250MHzType: PNP..

The 2N4400 is an NPN (Negative-Positive-Negative) general-purpose transistor commonly available in a pack of five. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N4400 is specifically designed for general-purpose applications.FeaturesCollector-Emitter Volt ..

The 2N4126 is a PNP (Positive-Negative-Positive) general-purpose transistor. Transistors are electronic devices used to amplify or switch electronic signals, and the 2N4126 is specifically designed for general-purpose applications.FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo):..

FeaturesCollector-Emitter Volt (Vceo): 30VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.2Ahfe: 50-150 @ 2mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): -Type: PNP..

FeaturesCollector-Emitter Volt (Vceo): 25VCollector-Base Volt (Vcbo): 30VCollector Current (Ic): 0.2Ahfe: 120-360 @ 2mAPower Dissipation (Ptot): 625mWCurrent-Gain-Bandwidth (ftotal): 300MHzType: PNP..