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MOSFETs
IRFBE30 MOSFET – 800V 4.1A N-Channel Power MOSFET TO-220 Package
Product Highlights:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 800V
- Continuous Drain Current (Id) 4.1A
- Drain-Source Resistance (Rds On) 3Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 78 nC
- Operating Temperature Range -55 – 150?C
- Power Dissipation (Pd) 125W
SKU: RM006764 -
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