Description:
P55NF06 power MOSFETs have been developed using STMicroelectronics? unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switches in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features:
- 100% avalanche-tested
- Application-oriented characterization
- Switching application
Detailed Specifications:-
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 60V
- Continuous Drain Current (Id) 50A
- Drain-Source Resistance (Rds On) 0.018Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 60 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 110W
