Description:
IRFP250N is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features:
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Ease of paralleling
- Simple drive requirements
Detailed Specifications:-
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 200V
- Continuous Drain Current (Id) 30A
- Drain-Source Resistance (Rds On) 0.075Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 123 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 214W
