Description:
IRFP350 is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features:
- Avalanche Rugged Technology
- Lower Input Capacitance
- Extended Safe Operating Area
- Lower Leakage Current: 10?A (Max.) @ VDS = 400V
- Improved Gate Charge
Detailed Specifications:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 400V
- Continuous Drain Current (Id) 16A
- Drain-Source Resistance (Rds On) 300mOhms
- Gate-Source Voltage (Vgs) 30V
- Gate Charge (Qg) 150 nC
- Operating Temperature Range -55 – 150?C
- Power Dissipation (Pd) 190W
