Description:
IRFP150N is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features:-
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
Detailed Specifications:-
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 100V
- Continuous Drain Current (Id) 42A
- Drain-Source Resistance (Rds On) 0.036Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 110 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 160W
