Description:
IRFI644 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features:
- Isolated package
- High voltage isolation
- Sink to lead creepage distance = 4.8 mm
- Dynamic dV/dt rating
- Low thermal resistance
- Lead (Pb)-free available
Detailed Specifications:-
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 250V
- Continuous Drain Current (Id) 7.9A
- Drain-Source Resistance (Rds On) 0.28Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 68 nC
- Operating Temperature Range -55 – 150?C
- Power Dissipation (Pd) 40W
