IRF830AL MOSFET – 500V 4.5A N-Channel Power MOSFET TO-220 Package
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Specifications of IRF830AL MOSFET – 500V 4.5A N-Channel Power MOSFET TO-220 Package :
- Drain-Source Breakdown Voltage min : 500V
- Temperature Coefficient type : 0.061V/?C
- Gate-Source Threshold Voltage min : 2.0V
- Gate-Source Threshold Voltage max : 4.0V
- Gate-Source Leakage max : +100nA
- Drain-Source On-State Resistance : 1.5?
- Forward Transconductance min : 2.5S
