Electronic Components
Showing 2233–2256 of 2756 resultsSorted by price: low to high
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Neodymium Block Magnets
13mm x 10mm (13×10 mm) Neodymium Cylindrical Strong Magnet
Product Highlights:
- Shape: Cylindrical
- Dimensions: 13mm diameter x10mm thickness
- Quantity: 01 Pcs
- Plating /Coating: Ni-Cu-Ni (Nickel)
- Tolerance: +/- 0.1
- Material: Neodymium Magnets (NdFeB)
- Magnetization Direction: Diameter
- Max Operating Temp: 176?F (80?C)
- Ages:7+ ages, both for kids and adults
SKU: RM001448 -
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MOSFETs
IRFP140N MOSFET – 100V 33A N-Channel Power MOSFET TO-247 Package
Product Highlights:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 100V
- Continuous Drain Current (Id) 33A
- Drain-Source Resistance (Rds On) 0.052Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 94 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 140W
SKU: RM004948 -
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Microcontroller ICs
AT89S2051 Microcontroller
Product Highlights
- Compatible with MCS?51 Products.
- 2 K/4 K Bytes of In-System Programmable (ISP) Flash Program Memory.
- Endurance: 10,000 Write/Erase Cycles.
- 2.7 V to 5.5 V Operating Range.
- Fully Static Operation: 0 Hz to 24 MHz (x1 and x2 Modes).
SKU: RM000695 -
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Operational Amplifier ICs
CA3240 Dual 4.5MHz Bi-MOS Operational Amplifier
Product Highlights
- P-Channel MOSFET in Input Circuit for High Input Impedance
- CMOS Output Stage for Output to Either Supply Rails
- Offset Voltage: 5mV max
- Input Offset Current: 20pA
- Common Mode Rejection Ratio: 90 dB
- Slew Rate: 9 V/?s
- Low Supply Current: 6mA
SKU: RM002037 -
MOSFETs
IRFP450 MOSFET – 500V 14A N-Channel Power MOSFET TO-247 Package
Product Highlights:
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 500V
- Continuous Drain Current (Id) 14A
- Drain-Source Resistance (Rds On) 370mOhms
- Gate-Source Voltage (Vgs) 30V
- Gate Charge (Qg) 77 nC
- Operating Temperature Range -55 – 150?C
- Power Dissipation (Pd) 200W
SKU: RM006868 -
MOSFETs
IRFP054N MOSFET – 55V 81A N-Channel HEXFET Power MOSFET TO-247 Package
Product Highlights
- Number of Channels 1 Channel
- Transistor Polarity N-Channel
- Drain-Source Breakdown Voltage (Vds) 55V
- Continuous Drain Current (Id) 81A
- Drain-Source Resistance (Rds On) 0.012Ohms
- Gate-Source Voltage (Vgs) 20V
- Gate Charge (Qg) 130 nC
- Operating Temperature Range -55 – 175?C
- Power Dissipation (Pd) 170W
SKU: RM008672 -
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